FDMS4435BZ: P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ

Description: This P-Channel MOSFET is produced using an advance...
  • This P-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
  • Features
  • Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
  • Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
  • Extended VGSS range (-25 V) for battery applications
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability
  • HBM ESD protection level >7 kV typical (Note 4)
  • 100% UIL tested
  • Termination is Lead-free and RoHS Compliant
  • Applications
  • Notebook PC
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS4435BZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -30V, -18A, 20mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -25 
  • VGS Max (V): 25 
  • VGS(th) Max (V): -3 
  • ID Max (A): -18 
  • PD Max (W): 39 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 37 
  • RDS(on) Max @ VGS = 10 V (mΩ): 20 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 18 
  • Ciss Typ (pF): 1540 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site