FDMS6673BZ: P-Channel PowerTrench® MOSFET -30V, -82A, 6.8mΩ

Description: The FDMS6673BZ has been designed to minimize losse...
  • The FDMS6673BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) and ESD protection.
  • Features
  • Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A
  • Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A
  • Advanced Package and Silicon combination for low rDS(on)
  • HBM ESD protection level of 8 kV typical (Note 3)
  • MSL1 robust package design
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS6673BZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® MOSFET -30V, -82A, 6.8mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>1K
  • ON Semiconductor:66,000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -30 
  • VGS Max (V): 25 
  • VGS(th) Max (V): -3 
  • ID Max (A): -82 
  • PD Max (W): 73 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 12.5 
  • RDS(on) Max @ VGS = 10 V (mΩ): 6.8 
  • Qg Typ @ VGS = 4.5 V (nC): 43 
  • Qg Typ @ VGS = 10 V (nC): 52 
  • Ciss Typ (pF): 4444 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site