FDMS8026S: N-Channel PowerTrench® SyncFET™ 30V, 22A, 4.3mΩ

Description: The FDMS8026S has been designed to minimize losses...
  • The FDMS8026S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
  • Features
  • Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 19 A
  • Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
  • Advanced package and Silicon combination for low rDS(on) and high efficiency
  • SyncFET Schottky Body Diode
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS8026S
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® SyncFET™ 30V, 22A, 4.3mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 22 
  • PD Max (W): 41 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 5.2 
  • RDS(on) Max @ VGS = 10 V (mΩ): 4.3 
  • Qg Typ @ VGS = 4.5 V (nC): 93 
  • Qg Typ @ VGS = 10 V (nC): 13 
  • Ciss Typ (pF): 1715 
  • Package Type: PQFN-8 
  • ON Semiconductor Full Web Site