FDMS8820: N-Channel PowerTrench® MOSFET 30V, 160A, 2.0mΩ

Description: This N-Channel MOSFET has been designed specifical...
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
  • Features
  • Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 28 A
  • Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency
  • Next generation enhanced body diode technology, engineered for soft recovery
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS Compliant
  • Applications
  • Graphic Card
  • VRM Vcore Switching for Desktop and Server
  • Oring FET / Load Switch
  • DC-DC Conversion
  • Technical Documentation & Design Resources
    Availability and Samples
    FDMS8820
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 160A, 2.0mΩ
  • Package Type: PQFN-8
  • Package Case Outline: 483AE
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V): 2.5 
  • ID Max (A): 160 
  • PD Max (W): 78 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 2.4 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 2.4 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 13 
  • Qg Typ @ VGS = 10 V (nC): 30 
  • Ciss Typ (pF): 3995 
  • Package Type: PQFN-8 
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