FDN361BN: N-Channel, Logic Level, PowerTrench® MOSFET 30V, 1.4A, 110mΩ

Description: These N-Channel Logic Level MOSFETs are produced u...
  • These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
    These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
  • Features
  • 1.8 A, 30 V.
  • RDS(ON) = 110 mΩ @ VGS = 10 V
  • RDS(ON) = 160 mΩ @ VGS = 4.5 V
  • Low Gate Charge
  • Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.
  • High Performance Trench Technology for Extremely Low rDS(on)
  • Applications
  • This product is general usage and suitable for many different applications.
  • Battery Powered Circuits
  • End Products
  • Notebook Computers
  • Portable Phones
  • PCMCIA Cards
  • Technical Documentation & Design Resources
    Availability and Samples
    FDN361BN
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel, Logic Level, PowerTrench® MOSFET 30V, 1.4A, 110mΩ
  • Package Type: SOT-23-3
  • Package Case Outline: 527AG
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 1.4 
  • PD Max (W): 0.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 160 
  • RDS(on) Max @ VGS = 10 V (mΩ): 110 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 1.3 
  • Ciss Typ (pF): 145 
  • Package Type: SOT-23-3 
  • ON Semiconductor Full Web Site