FDN361BN: N-Channel, Logic Level, PowerTrench® MOSFET 30V, 1.4A, 110mΩ
Description: These N-Channel Logic Level MOSFETs are produced u...
These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
1.8 A, 30 V.
RDS(ON) = 110 mΩ @ VGS = 10 V
RDS(ON) = 160 mΩ @ VGS = 4.5 V
Low Gate Charge
Industry Standard Outline SOT-23 Surface Mount Package Using Proprietary SuperSOT™-3 Design for Superior Thermal and Electrical Capabilities.
High Performance Trench Technology for Extremely Low rDS(on)
This product is general usage and suitable for many different applications.
Battery Powered Circuits
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: N-Channel, Logic Level, PowerTrench® MOSFET 30V, 1.4A, 110mΩ
Package Type: SOT-23-3
Package Case Outline: 527AG
Container Type: REEL
Container Qty: 3000
Market Leadtime (weeks):Contact Factory
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):