FDP2D3N10C: N-Channel PowerTrench® MOSFET, Shielded Gate, 100V, 222A, 2.3mΩ

Description: This N-Channel MV MOSFET is produced using ON Semi...
  • This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
  • Features
  • Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A - Power Density & Shielded Gate
  • High Performance Trench Technology for Extremely Low RDS(on) - High power density with Shielded gate technology
  • Extremely Low Reverse Recovery Charge, Qrr - Low Vds spike internal snubber function.
  • Low Gate Charge, QG = 108nC ( Typ.) - Low switching loss
  • High Power and Current Handling Capability - Low Qrr/Trr
  • 100% UIL Tested - Soft recovery performance
  • RoHS Compliant - Good EMI performance
  • Applications
  • Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • End Products
  • Server
  • Telecom
  • Computing ( ATX, Workstation, Adapter, Industrial Power Supplies etc. )
  • Motor Drive
  • Uninterruptible Power Supplies
  • Technical Documentation & Design Resources
    Availability and Samples
    FDP2D3N10C
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET, Shielded Gate, 100V, 222A, 2.3mΩ, N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 222A, 2.3mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 221A
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Newark:<100
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 100 
  • VGS Max (V):
  • VGS(th) Max (V):
  • ID Max (A): 222 
  • PD Max (W): 214 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 2.3 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 108 
  • Ciss Typ (pF): 7980 
  • Package Type: TO-220-3 
  • ON Semiconductor Full Web Site