FDP6030BL: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 40A, 18mΩ

Description: This N-Channel Logic Level MOSFET has been designe...
  • This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

    These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(on) specifications resulting in DC/DC power supply designs with higher overall efficiency.
  • Features
  • 40 A, 30 V
  • RDS(ON) = 0.018 Ω @ VGS = 10 V
  • RDS(ON) = 0.024 Ω @ VGS = 4.5 V
  • Critical DC electrical parameters specified at evevated temperature.
  • Rugged internal source-drain diode can eliminate theneed for an external Zener diode transient suppressor.
  • High performance trend technology for extremely low RDS(ON).
  • 175°C maximum junction temperature rating.
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDP6030BL
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 40A, 18mΩ
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 800
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • ON Semiconductor:7,200
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 40 
  • PD Max (W): 60 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 24 
  • RDS(on) Max @ VGS = 10 V (mΩ): 18 
  • Qg Typ @ VGS = 4.5 V (nC): 120 
  • Qg Typ @ VGS = 10 V (nC): 12 
  • Ciss Typ (pF): 1160 
  • Package Type: TO-220-3 
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