FDS3572: N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ

Description: N-Channel PowerTrench® MOSFET 80 V, 8.9...
  • N-Channel PowerTrench® MOSFET 80 V, 8.9 A, 16 mΩ
  • Features
  • rDS(ON) = 14mΩ(Typ.), VGS =10V, ID = 8.9A
  • Qg(tot) = 31nC (Typ.), VGS = 10V
  • Low Miller Charge
  • Low QRR Body Diode
  • Optimized efficiency at high frequencies
  • UIS Capability (Single Pulse and Repetitive Pulse)Formerly developmental type 82663
  • Applications
  • This product is general usage and suitable for many different applications.
  • Primary Switch in Isolated DC/DC Converters
  • Distributed Power Architectures and Intermediate Bus Architectures
  • High Voltage Synchronous Rectifier
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS3572
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 80V, 8.9A, 16mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Avnet:>1K
  • Digikey:<1K
  • Newark:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 80 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 8.9 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 16 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 1990 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site