FDS3580: N-Channel PowerTrench® MOSFET 80V, 7.6A, 29mΩ
Description: This N-Channel MOSFET has been designed specifical...
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
7.6 A, 80 V.
RDS(ON ) = 0.029 Ω @ VGS = 10 V
RDS(ON) = 0.033 Ω @ VGS = 6 V.
Low gate charge (34nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability.
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: N-Channel PowerTrench® MOSFET 80V, 7.6A, 29mΩ
Package Type: SOIC-8
Package Case Outline: 751EB
Container Type: REEL
Container Qty: 2500
Market Leadtime (weeks):13 to 16
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):