FDS4935BZ: Dual P-Channel PowerTrench® MOSFET, -30V, -6.9A 22mΩ
Description: This P-Channel MOSFET has been designed specifical...
This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
–6.9 A, –30 V
RDS(ON) = 22 mΩ @ VGS = –10 V
RDS(ON) = 35 m @ VGS = – 4.5 V
Extended VGSS range (–25V) for battery applications
ESD protection diode (note 3)
High performance trench technology for extremelylow RDS(ON)
High power and current handling capability
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: Dual P-Channel PowerTrench® MOSFET, -30V, -6.9A 22mΩ
Package Type: SOIC-8
Package Case Outline: 751EB
Container Type: REEL
Container Qty: 2500
Market Leadtime (weeks):Contact Factory
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):