FDS6612A: N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ

Description: This N-Channel Logic Level MOSFET is produced usin...
  • This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
    These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • Features
  • 8.4 A, 30 V
  • RDS(ON) = 22 mΩ @ VGS = 10 V
  • RDS(ON) = 30 mΩ @ VGS = 4.5 V
  • Fast switching speed
  • Low gate charge
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS6612A
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • FDS6612A-NB5E029A
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power Trench® MOSFET, Logic Level, 30V, 8.4A, 22mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • ON Semiconductor:22,500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single   
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A): 8.4 
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 30 
  • RDS(on) Max @ VGS = 10 V (mΩ): 22 
  • Qg Typ @ VGS = 4.5 V (nC): 21 
  • Qg Typ @ VGS = 10 V (nC): 5.4 
  • Ciss Typ (pF): 560 
  • Package Type: SOIC-8 
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