FDS8449_F085: N-Channel PowerTrench® MOSFET 40V, 7.6A, 29mΩ

Description: These N-Channel MOSFETs are produced using an adva...
  • These N-Channel MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
  • Features
  • Typical RDS(on) = 21 mΩ @ VGS = 10 V, ID = 7.6A
  • Typical RDS(on) = 26 mΩ @ VGS = 4.5 V, ID = 6.8 A
  • Typical Qg(TOT) = 7.7 nC at VGS = 5 V, ID = 7.6 A
  • RoHS compliant
  • Qualified to AEC Q101
  • Applications
  • Infotainment
  • Portable Navigation
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Inverter
  • Power Supplies
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS8449-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 40V, 7.6A, 29mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<1K
  • FDS8449-F085P
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 40V, 7.6A, 29mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A): 7.6   
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 36 
  • RDS(on) Max @ VGS = 10 V (mΩ): 29 
  • Qg Typ @ VGS = 4.5 V (nC): 15 
  • Qg Typ @ VGS = 10 V (nC): 7.7 
  • Ciss Typ (pF): 760 
  • Package Type: SOIC-8 
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