FDS8813NZ: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
Description: This N–Channel MOSFET is produced using an a...
This N–Channel MOSFET is produced using an advanced PowerTrench® process that has been especially tailored to minimize the on–state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.5 A
Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 16 A
HBM ESD protection level of 5.6kV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handling capability
This product is general usage and suitable for many different applications.
Technical Documentation & Design Resources
Availability and Samples
Compliance: Pb-free Halide free
Description: N-Channel PowerTrench® MOSFET 30V, 18.5A, 4.5mΩ
Package Type: SOIC-8
Package Case Outline: 751EB
Container Type: REEL
Container Qty: 2500
Market Leadtime (weeks):13 to 16
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):