FDS8858CZ: Dual N & P-Channel PowerTrench® MOSFET 30V

Description: These dual N and P-Channel enhancement mode power ...
  • These dual N and P-Channel enhancement mode power MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
    These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • Features
  • Q1 N-Channel
    Max. RDS(on) = 17 mΩ at VGS = 10 V, ID = 8.6 A
    Max. RDS(on) = 20 mΩ at VGS = 4.5 V, ID = 7.3 A
  • Q2 P-Channel
    Max. RDS(on) = 20.5 mΩ at VGS = -10 V, ID = -7.3 A
    Max. RDS(on) = 34.5 mΩ at VGS = -4.5 V, ID = -5.6 A
  • High Power and Current Handling Capability in a Widely Used Surface Mount Package
  • Fast Switching Speed
  • Applications
  • This product is general usage and suitable for many different applications.
  • Inverter
  • Synchronous Buck
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS8858CZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual N & P-Channel PowerTrench® MOSFET 30V
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Digikey:>10K
  • Newark:<1K
  • Newark:<1K
  • Newark:>1K
  • Specifications
  • Channel Polarity: Complementary 
  • Configuration: Dual 
  • V(BR)DSS Min (V): ±30 
  • VGS Max (V): 25 
  • VGS(th) Max (V): ±3 
  • ID Max (A): N: 8.6, P: -7.3 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): N: 20.0, P:34.5 
  • RDS(on) Max @ VGS = 10 V (mΩ): N: 1.0, P:20.5 
  • Qg Typ @ VGS = 4.5 V (nC): 15 
  • Qg Typ @ VGS = 10 V (nC): 33 
  • Ciss Typ (pF): 1675 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site