FDS8882: N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ

Description: The FDS8882 has been designed to minimize losses i...
  • The FDS8882 has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
  • Features
  • Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 9 A
  • Max rDS(on) = 22.5 mΩ at VGS = 4.5 V, ID = 8 A
  • High performance trench technology for extremely low rDS(on) and fast switching
  • High power and current handling capability
  • Termination is Lead-free and RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Notebook System Regulators
  • DC/DC Converters
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS8882
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel PowerTrench® MOSFET 30V, 9A, 20.0mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 30 
  • VGS Max (V): 20 
  • VGS(th) Max (V):
  • ID Max (A):
  • PD Max (W): 2.5 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 22.5 
  • RDS(on) Max @ VGS = 10 V (mΩ): 20 
  • Qg Typ @ VGS = 4.5 V (nC): 28 
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 707 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site