FDS8949_F085: Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6.0A, 29mΩ

Description: These N-Channel Logic Level MOSFETs are produced u...
  • These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
  • Features
  • Max rDS(ON) = 29mΩ, @VGS = 10V
  • Max rDS(ON) = 36mΩ, @VGS = 4.5V
  • Low gate charge
  • High performance trench technology for extremely lowrDS(ON)
  • High power and current handling capability
  • Qualified to AEC Q101
  • RoHS compliant
  • Applications
  • Infotainment
  • Portable Navigation
  • Other
  • Power Train
  • Safety and Control
  • Comfort and Convenience
  • Body Electronics
  • Vehicle Security Systems
  • Other Automotive
  • Inverter
  • Power Supplies
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS8949-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: Dual N-Channel PowerTrench® MOSFET, Logic Level, 40V, 6.0A, 29mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • Newark:>1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 40 
  • VGS Max (V): ±20 
  • VGS(th) Max (V):
  • ID Max (A):
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=36 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=29 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 7.7 
  • Ciss Typ (pF): 715 
  • Package Type: SOIC-8 
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