FDS9953A: Dual P-Channel PowerTrench® MOSFET, 30V, -2.9A, 130mΩ

Description: This P-Channel MOSFET is a rugged gate version of ...
  • This P-Channel MOSFET is a rugged gate version of an advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
  • Features
  • -2.9 A, -30 V
  • RDS(on) = 130 mΩ@ VGS = -10 V
  • RDS(on) = 200 mΩ @ VGS = -4.5 V
  • Low gate charge (2.5nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection
  • Technical Documentation & Design Resources
    Availability and Samples
    FDS9953A
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual P-Channel PowerTrench® MOSFET, 30V, -2.9A, 130mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Newark:>1K
  • ON Semiconductor:10,000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): -30 
  • VGS Max (V): 25 
  • VGS(th) Max (V): -3 
  • ID Max (A): -2.9 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=200 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=130 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 2.5 
  • Ciss Typ (pF): 185 
  • Package Type: SOIC-8 
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