FDZ371PZ: P-Channel PowerTrench® Thin WL-CSP MOSFET, 1.5 V Specified, -20V, -3.7A, 75mΩ

Description: Designed on an advanced 1.5 V PowerTrench®
  • Designed on an advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ371PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on).
  • Features
  • Max rDS(on) = 75 mΩ at VGS = -4.5 V, ID = -2.0 A
  • Max rDS(on) = 90 mΩ at VGS = -2.5 V, ID = -1.5 A
  • Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -1.0 A
  • Max rDS(on) = 150 mΩ at VGS = -1.5 V, ID = -1.0 A
  • Occupies only 1.0 mm2 of PCB area. Less than 30% of the area of 2 x 2 BGA
  • Ultra-thin package: less than 0.4 mm height when mounted to PCB
  • HBM ESD protection level > 4.4 kV (Note 3)
  • RoHS Compliant
  • Applications
  • This product is general usage and suitable for many different applications.
  • Battery Management
  • Load Switch
  • Battery Protection
  • Technical Documentation & Design Resources
    Availability and Samples
    FDZ371PZ
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: P-Channel PowerTrench® Thin WL-CSP MOSFET, 1.5 V Specified, -20V, -3.7A, 75mΩ
  • Package Type: WLCSP-4
  • Package Case Outline: 567PS
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 5000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V):
  • VGS(th) Max (V): -1 
  • ID Max (A): -3.7 
  • PD Max (W): 1.7 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 90 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 75 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 12 
  • Ciss Typ (pF): 750 
  • Package Type: WLCSP-4 
  • ON Semiconductor Full Web Site