FFSH10120A-F085: SiC Schottky Diode 1200 V, 10 A

Description: Silicon Carbide (SiC) Schottky Diodes use a comple...
  • Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
  • Features
  • Max Junction Temperature 175 °C
  • AEC-Q101 qualified
  • No Reverse Recovery / No Forward Recovery
  • High Surge Current Capacity
  • Positive Temperature Coefficient
  • Ease of Paralleling
  • Applications
  • Automotive HEV-EV Onboard Chargers
  • Automotive HEV-EV DC-DC Converters
  • End Products
  • Automotive HEV-EV Onboard Chargers
  • Technical Documentation & Design Resources
    Availability and Samples
    FFSH10120A-F085
  • Status: Active
  • Compliance: AEC Qualified PPAP Capable Pb-free Halide free 
  • Description: SiC Schottky Diode 1200 V, 10 A
  • Package Type: TO-247-2
  • Package Case Outline: 340CL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<1K
  • Newark:<1K
  • ON Semiconductor:1,800
  • Specifications
  • Device Grade:  
  • Configuration: with Schottky Diode 
  • VRRM (V): 1200V 
  • IF(ave) (A): 10A 
  • VF (Max): 1.75 
  • IFSM (A): 90A 
  • IR (Max) (µA): 200uA 
  • Package Type: TO-247-2 
  • ON Semiconductor Full Web Site