FGH75T65SQDT: IGBT, 650 V, 75 A Field Stop Trench

Description: FGH75T65SQDT...
  • FGH75T65SQDT
  • Features
    Technical Documentation & Design Resources
    Availability and Samples
    FGH75T65SQDT-F155
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT, 650 V, 75 A Field Stop Trench
  • Package Type: TO-247-3
  • Package Case Outline: 340CH
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Newark:<1K
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 75 
  • VCE(sat) Typ (V): 1.6 
  • VF Typ (V): 1.8 
  • Eoff Typ (mJ): 0.18 
  • Eon Typ (mJ): 0.76 
  • Trr Typ (ns): 76 
  • Irr Typ (A):
  • Gate Charge Typ (nC): 128 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 375 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site