FQA13N50C_F109: N-Channel Power MOSFET, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P

Description: These N-Channel enhancement mode power field effec...
  • These N-Channel enhancement mode power field effect transistors are produced using a proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
  • Features
  • 13.5 A, 500 V
    RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.75 A
  • Low Gate Charge (Typ. 43 nC)
  • Low Crss (Typ. 20 pF)
  • 100% Avalanche Tested
  • Improved dv/dt Capability
  • Applications
  • High Efficiency Switched Mode Power Supplies
  • Active Power Factor Correction (PFC)
  • Electronic Lamp Ballasts
  • Technical Documentation & Design Resources
    Availability and Samples
    FQA13N50C-F109
  • Status: Active
  • Compliance: Pb-free 
  • Description: N-Channel Power MOSFET, QFET®, 500 V, 13.5 A, 480 mΩ, TO-3P
  • Package Type: TO-3P-3L
  • Package Case Outline: 340BZ
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 450
  • Inventory

  • Market Leadtime (weeks):2 to 4
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  • ON Semiconductor:450
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration:  
  • V(BR)DSS Min (V): 500 
  • VGS Max (V):
  • VGS(th) Max (V):
  • ID Max (A): 13.5 
  • PD Max (W): 218 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 480 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 43 
  • Ciss Typ (pF): 1580 
  • Package Type: TO-3P-3L 
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