FQI4N90: N-Channel Power MOSFET, QFET®, 900 V, 4.2 A, 3.3 Ω, I2PAK

Description: This N-Channel enhancement mode power MOSFET is pr...
  • This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  • Features
  • 4.2A, 900V, RDS(on) = 3.3Ω(Max.) @VGS = 10 V, ID = 2.1A
  • Low gate charge ( Typ. 24 nC)
  • Low Crss ( Typ. 9.5pF)
  • 100% avalanche tested
  • Applications
  • Other Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    FQI4N90TU
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: N-Channel Power MOSFET, QFET®, 900 V, 4.2 A, 3.3 Ω, I2PAK
  • Package Type: I2PAK-3 / D2PAK-3 STRAIGHT LEAD
  • Package Case Outline: 418AV
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 900 
  • VGS Max (V): ±30 
  • VGS(th) Max (V):
  • ID Max (A): 4.2 
  • PD Max (W): 140 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 3300 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 24 
  • Ciss Typ (pF): 860 
  • Package Type: I2PAK-3 / D2PAK-3 STRAIGHT LEAD 
  • ON Semiconductor Full Web Site