FQP12P20: Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, TO-220

Description: This P-Channel enhancement mode power MOSFET is pr...
  • This P-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
  • Features
  • -11.5A, -200V, RDS(on) = 470mΩ(Max.) @VGS = -10 V, ID = -5.75A
  • Low gate charge ( Typ. 31nC)
  • Low Crss ( Typ. 30pF)
  • 100% avalanche tested
  • RoHS Compliant
  • Applications
  • Other Audio & Video
  • Technical Documentation & Design Resources
    Availability and Samples
    FQP12P20
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, P-Channel, QFET®, -200 V, -11.5 A, 470 mΩ, TO-220
  • Package Type: TO-220-3
  • Package Case Outline: 340AT
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Digikey:<1K
  • Newark:>1K
  • ON Semiconductor:5,000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -200 
  • VGS Max (V): ±30 
  • VGS(th) Max (V): -5 
  • ID Max (A): -11.5 
  • PD Max (W): 120 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 470 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 31 
  • Ciss Typ (pF): 920 
  • Package Type: TO-220-3 
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