HUF75329D3S: N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
Description: These N-Channel power MOSFETs are manufactured usi...
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75329.
Peak Current vs Pulse Width Curve
UIS Rating Curve
- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards"
AC-DC Merchant Power Supply - Servers & Workstations
Server & Mainframe
Technical Documentation & Design Resources
Availability and Samples
Description: N-Channel UltraFET Power MOSFET 55V, 20A, 26mΩ
Package Type: DPAK-3 / TO-252-3
Package Case Outline: 369AS
Container Type: REEL
Container Qty: 2500
Market Leadtime (weeks):8 to 12
V(BR)DSS Min (V):
VGS Max (V):
VGS(th) Max (V):
ID Max (A):
PD Max (W):
RDS(on) Max @ VGS = 2.5 V (mΩ):
RDS(on) Max @ VGS = 4.5 V (mΩ):
RDS(on) Max @ VGS = 10 V (mΩ):
Qg Typ @ VGS = 4.5 V (nC):
Qg Typ @ VGS = 10 V (nC):
Ciss Typ (pF):
DPAK-3 / TO-252-3