IRLM220A: Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223

Description: These N-Channel enhancement mode power field effec...
  • These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, ad withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
  • Features
  • Avalanche Rugged Technology
  • Rugged Gate Oxide Technology
  • Lower Input Capacitance
  • Improved Gate Charge
  • Extended Safe Operating Area
  • Lower Leakage Current : 10 μA (Max.) @ VDS = 200 V
  • Lower rDS(on) : 0.609 Ω (Typ.)
  • Applications
  • This product is general usage and suitable for many different applications
  • Technical Documentation & Design Resources
    Availability and Samples
    IRLM220ATF
  • Status: Active
  • Compliance: Pb-free 
  • Description: Power MOSFET, N-Channel, A-FET, 200 V, 1.13 A, 800 mΩ, SOT-223
  • Package Type: SOT-223-4 / TO-261-4
  • Package Case Outline: 318H-01
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 4000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:<1K
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 200 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): 100 
  • ID Max (A): 1.13 
  • PD Max (W):
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 800 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 2.8 
  • Qg Typ @ VGS = 10 V (nC): 10.3 
  • Ciss Typ (pF): 330 
  • Package Type: SOT-223-4 / TO-261-4 
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