MBRAF1100: 1.0 A, 100 V Schottky Rectifier

Description: The Schottky Rectifier employs the Schottky Barrie...
  • The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
  • Features
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • High Blocking Voltage - 100 V
  • 150°C Operating Junction Temperature
  • Guard-Ring for Stress Protection
  • This is a Pb-Free Device

    Mechanical Characteristics:
  • Case: Epoxy, Molded
  • Weight: 95 mg (approximately)
  • Finish: All External Surfaces Corrosion Resistant and Terminal
    Leads are Readily Solderable
  • Lead and Mounting Surface Temperature for Soldering Purposes:
    260°C Max. for 10 Seconds
  • Shipped in 12 mm Tape and Reel, 5000 Units per Reel
  • Cathode Polarity Band
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    MBRAF1100T3G
  • Status: Active
  • Compliance: AEC Qualified Pb-free Halide free 
  • Description: 1.0 A, 100 V Schottky Rectifier
  • Package Type: SMA-FL
  • Package Case Outline: 403AA
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 5000
  • Inventory

  • Market Leadtime (weeks):4 to 8
  • Arrow:0
  • ON Semiconductor:5,000
  • Specifications
  • Configuration: Single 
  • VRRM Min (V): 100 
  • VF Max (V): 0.75 
  • IRM Max (µA): 500 
  • IO(rec) Max (A):
  • IFSM Max (A): 50 
  • trr Max (ns):
  • Cj Max (pF):
  • Package Type: SMA-FL 
  • ON Semiconductor Full Web Site