NDS9948: Dual 60V P-Channel PowerTrench® MOSFET -2.3A, 250mΩ

Description: This P-Channel MOSFET is a rugged gate version of ...
  • This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V - 20V).
  • Features
  • -2.3A, -60V
  • RDS(ON) = 250 mΩ @ VGS = -10V
  • RDS(ON) = 500 mΩ @ VGS = -4.5V
  • Low gate charge (9nC typical)
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability
  • Applications
  • This product is general usage and suitable for many different applications.
  • Power Management
  • Load Switch
  • Battery Protection
  • Technical Documentation & Design Resources
    Availability and Samples
    NDS9948
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual 60V P-Channel PowerTrench® MOSFET -2.3A, 250mΩ
  • Package Type: SOIC-8
  • Package Case Outline: 751EB
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Digikey:<100
  • Newark:<1K
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Dual 
  • V(BR)DSS Min (V): -60 
  • VGS Max (V): ±20 
  • VGS(th) Max (V): -3 
  • ID Max (A): -2.3 
  • PD Max (W): 60 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ): Q1=Q2=500 
  • RDS(on) Max @ VGS = 10 V (mΩ): Q1=Q2=250 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 394 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site