NGTB30N60IHLWG: IGBT, Field Stop (FS), 30 A, 600 V
Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.
Low Saturation Voltage using Trench with Fieldstop Technology - Low Conduction Loss
Low Switching Loss - Reduces System Power Dissipation
Half Bridge IH
Inductive Heating Hobs
Technical Documentation & Design Resources
Product Change Notification
Availability and Samples
Compliance: Pb-free Halide free
Description: IGBT, Field Stop (FS), 30 A, 600 V
Package Type: TO-247-3
Package Case Outline: 340AL
Container Type: TUBE
Container Qty: 30