NGTB30N65IHL2: IGBT, 650V 30A FS2 Induction Heating

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • Features
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • TJmax = 175°C
  • Soft, Fast Free Wheeling Diode
  • Applications
  • Inductive Heating
  • Soft Switching
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: IGBT, 650V 30A FS2 Induction Heating
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • ON Semiconductor:840
  • Specifications
  • V(BR)CES Typ (V): 650 
  • IC Max (A): 30 
  • VCE(sat) Typ (V): 1.7 
  • VF Typ (V): 1.1 
  • Eoff Typ (mJ): 0.2 
  • Eon Typ (mJ):
  • Trr Typ (ns): 430 
  • Irr Typ (A): 35 
  • Gate Charge Typ (nC): 135 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 219 
  • Co-Packaged Diode: Yes 
  • Package Type: TO-247-3 
  • ON Semiconductor Full Web Site