NGTB40N65IHRT: IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features robust and cost effective Field Stop (FS2) trench construction with a monolithic RC Diode. It provides a cost effective Solution for applications where diode losses are minimal. The IGBT is optimized for low conduction losses (low VCEsat) and is well suited for resonant or soft switching applications.
  • Features
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Conduction Loss Design for Soft Switching Application
  • Reduced Power Dissipation in Inducting Heating Application
  • Reliable and Cost Effective Single Die Solution
  • This is a Pb−Free Device
  • Applications
  • Inductive Heating
  • Air Conditioning PFC
  • Welding
  • End Products
  • Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
  • Status: Lifetime
  • Compliance: Pb-free 
  • Description: IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A, 650 V Monolithic reverse conducting IGBT
  • Package Type: TO-3P-3
  • Package Case Outline: 340AB
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • ON Semiconductor:60,840
  • ON Semiconductor Full Web Site