NGTB45N60S1: IGBT, 600 V/45 A - Welding

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
  • Features
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5µ s Short−Circuit Capability
  • End Products
  • Welding Machine
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NGTB45N60S1WG
  • Status: Lifetime
  • Compliance: Pb-free Halide free 
  • Description: IGBT, 600 V/45 A - Welding
  • Package Type: TO-247-3
  • Package Case Outline: 340AL
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Avnet:<100
  • Newark:<1K
  • ON Semiconductor Full Web Site