NGTG30N60FWG: IGBT, 600 V, 30 A, PFC, Low Frequency

Description: This Insulated Gate Bipolar Transistor (IGBT) feat...
  • This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
  • Features
  • Optimized for Very Low VCEsat - Reduces System Power Dissipation
  • Low Switching Loss
  • 5µs Short Circuit Capability
  • Applications
  • Solar Inverters
  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Technical Documentation & Design Resources
    Availability and Samples
    NGTG30N60FWG
  • Status: Lifetime
  • Compliance: Pb-free Halide free 
  • Description: IGBT, 600 V, 30 A, PFC, Low Frequency
  • Package Type: TO-247-3
  • Package Case Outline: 340L-02
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 30
  • Inventory

  • Market Leadtime (weeks):Contact Factory
  • Arrow:0
  • Avnet:<1K
  • ON Semiconductor:2,790
  • ON Semiconductor Full Web Site