NIS5112: 12 V Electronic Fuse, eFuse

Description: The NIS5112 is an integrated switch utilizing a hi...
  • The NIS5112 is an integrated switch utilizing a high side N-channel FET driven by an internal charge pump. This switch features a MOSFET which allows for current sensing using inexpensive chip resistors intead of expensive, low impedance current shunts.
    It is designed to operate in 12 V systems and includes a robust thermal protection circuit.
  • Features
  • Integrated Power Device
  • Power Device Thermally Protected
  • No External Current Shunt Required
  • Enable/Timer Pin
  • Adjustable Slew Rate for Output Voltage
  • 9 V to 18 V Input Range
  • 30 mΩ Typical
  • Internal Charge Pump
  • Applications
  • Hard Drives
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NIS5112D1R2G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 12 V Electronic Fuse, eFuse
  • Package Type: SOIC-8
  • Package Case Outline: 751-07
  • MSL: 3
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:>1K
  • Newark:>1K
  • PandS:>1K
  • NIS5112D2R2G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: 12 V Electronic Fuse, eFuse
  • Package Type: SOIC-8
  • Package Case Outline: 751-07
  • MSL: 3
  • Container Type: REEL
  • Container Qty: 2500
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • Avnet:>1K
  • Digikey:>1K
  • FutureElectronics:>1K
  • Newark:>1K
  • ON Semiconductor:65,000
  • PandS:>1K
  • Packages
    Specifications
  • Type: Latch Off  Auto-Retry 
  • VI Max (V): 18 
  • rDS(on) Max (mΩ): 35 
  • TSD Typ (°C): 135 
  • Thyst Typ (°C): 40 
  • Package Type: SOIC-8 
  • ON Semiconductor Full Web Site