NSBA114YDP6: Dual PNP Bipolar Digital Transistor (BRT)

Description: This series of digital transistors is designed to ...
  • This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
  • Features
  • Simplifies Circuit Design
  • Reduces Board Space
  • Reduces Component Count
  • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NSBA114YDP6T5G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual PNP Bipolar Digital Transistor (BRT)
  • Package Type: SOT-963
  • Package Case Outline: 527AD
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 8000
  • Inventory

  • Market Leadtime (weeks):2 to 4
  • Arrow:0
  • ON Semiconductor:136,000
  • PandS:>1K
  • Specifications
  • Polarity: Dual PNP 
  • IC Continuous (A): 0.1 
  • V(BR)CEO Min (V): 50 
  • hFE Min: 80 
  • R1 (kΩ): 10 
  • R2 (kΩ): 47 
  • R1/R2 Typ: 0.21 
  • Vi(off) Max (V): 0.5 
  • Vi(on) Min (V): 1.4 
  • Package Type: SOT-963 
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