NSR02F30NXT5G: Schottky Barrier Diode, 200 mA, 30 V

Description: The Schottky diode is optimized for low forward vo...
  • The Schottky diode is optimized for low forward voltage drop and low leakage current. The DSN2 Dual Silicon no lead package is a chip level package using solderable metal contacts under the package similar to DFN style packages. The DSN style package enables 100 percent utilization of the package area for active silicon offering a significant performance per board area advantage compared to products in plastic molded packages. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements.
  • Features
  • Low Forward Voltage Drop - Reduces Power Dissipation
  • High Switching Speed - Better Performance
  • High ESD Rating - HBM: 3B MM: C
  • Low Reverse Current
  • Applications
  • LCD and Keypad Backlighting
  • Camera Photo Flash
  • Buck and Boost DC-DC Converters
  • End Products
  • Reverse Voltage and Current Protection
  • Mobile Handsets
  • Notebooks, PCs & PDA
  • GPS, MP3 Players
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Schottky Barrier Diode, 200 mA, 30 V, DSN2 (0201) Schottky Barrier Diode
  • Package Type: DSN-2
  • Package Case Outline: 152AA
  • MSL: 1
  • Container Type: DSFTP
  • Container Qty: 5000
  • Inventory

  • Market Leadtime (weeks):8 to 12
  • Arrow:0
  • Digikey:>10K
  • Newark:>1K
  • PandS:>1K
  • Specifications
  • Configuration: Single 
  • VRRM Min (V): 30 
  • VF Max (V): 0.37 
  • IRM Max (µA):
  • IO(rec) Max (A): 0.2 
  • IFSM Max (A):
  • trr Max (ns):
  • Cj Max (pF):
  • Package Type: DSN-2 
  • ON Semiconductor Full Web Site