NTHD4P02: Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ

Description: Power MOSFET -20V -3A 155mΩ Dual P-Channel ChipFET...
  • Power MOSFET -20V -3A 155mΩ Dual P-Channel ChipFET™
    3.0 A Schottky Barrier Diode
  • Features
  • Leadless SMD package featuring a MOSFET and Schottky Diode
  • 40% smaller than TSOP-6 package with similar thermal characteristics
  • Independent pinout to each device to ease circuit design
  • Ultra low VF Schottky
  • Applications
  • Li-Ion Battery Charging
  • High side DC-DC Conversion circuits
  • High side drive for small brushless DC motors
  • Power management in portable, battery powered products
  • Technical Documentation & Design Resources
    Product Change Notification
    Availability and Samples
    NTHD4P02FT1G
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ
  • Package Type: ChipFET-8
  • Package Case Outline: 1206A-03
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Inventory

  • Market Leadtime (weeks):Contact Factory
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  • Digikey:>1K
  • PandS:>1K
  • NTHD4P02FT1
  • Status: Obsolete
  • Compliance: 
  • Description: Dual P-Channel ChipFET™ Power MOSFET with Schottky Barrier Diode -20V -3A 155mΩ
  • Package Type: ChipFET-8
  • Package Case Outline: 1206A-03
  • MSL: 1
  • Container Type: REEL
  • Container Qty: 3000
  • Specifications
  • Channel Polarity: P-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): -20 
  • VGS Max (V): 12 
  • VGS(th) Max (V): -1.2 
  • ID Max (A): -3 
  • PD Max (W): 1.1 
  • RDS(on) Max @ VGS = 2.5 V (mΩ): 200 
  • RDS(on) Max @ VGS = 4.5 V (mΩ): 130 
  • RDS(on) Max @ VGS = 10 V (mΩ):
  • Qg Typ @ VGS = 4.5 V (nC): 7.4 
  • Qg Typ @ VGS = 10 V (nC):
  • Ciss Typ (pF): 185 
  • Package Type: ChipFET-8 
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