NTPF082N65S3F: Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-220F

Description: SUPERFET III MOSFET is ON Semiconductor’s brand−ne...
  • SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power systems for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
  • Features
  • 700 V @ TJ = 150 oC - Higher system reliability at low temperature operation
  • Ultra Low Gate Charge (Typ. Qg = 70 nC) - Lower switching loss
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 680 pF) - Lower switching loss
  • Optimized Capacitance - Lower peak Vds and lower Vgs oscillation
  • Excellent body diode performance (low Qrr, robust body diode) - Higher system reliability in LLC and Phase shift full bridge circuit
  • Typ. RDS(on) = 70 mΩ
  • 100% Avalanche Tested
  • RoHS Compliant
  • Applications
  • Telecomunication
  • Cloud system
  • Industrial
  • End Products
  • Telecom power
  • Server power
  • Solar / UPS
  • EV charger
  • Technical Documentation & Design Resources
    Availability and Samples
    NTPF082N65S3F
  • Status: Active
  • Compliance: Pb-free Halide free 
  • Description: Power MOSFET, N-Channel, SUPERFET® III, FRFET®, 650 V, 40 A, 82 mΩ, TO-220F
  • Package Type: TO-220-3 FullPak
  • Package Case Outline: 221D-03
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 1000
  • Specifications
  • Channel Polarity: N-Channel 
  • Configuration: Single 
  • V(BR)DSS Min (V): 650 
  • VGS Max (V): 30 
  • VGS(th) Max (V):
  • ID Max (A): 40 
  • PD Max (W): 48 
  • RDS(on) Max @ VGS = 2.5 V (mΩ):
  • RDS(on) Max @ VGS = 4.5 V (mΩ):
  • RDS(on) Max @ VGS = 10 V (mΩ): 82 
  • Qg Typ @ VGS = 4.5 V (nC):
  • Qg Typ @ VGS = 10 V (nC): 70 
  • Ciss Typ (pF): 3240 
  • Package Type: TO-220-3 FullPak 
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