SGF5N150UF: IGBT, Discrete, High Performance

Description: Fairchild’s Insulated Gate Bipolar Transistor (IGB...
  • Fairchild’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.
  • Features
  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 4.7 V @ I C = 5A
  • High Input Impedance
  • Applications
  • Other Industrial
  • Technical Documentation & Design Resources
    Availability and Samples
    SGF5N150UFTU
  • Status: Active
  • Compliance: Pb-free 
  • Description: IGBT, Discrete, High Performance
  • Package Type: TO-3PF-3L
  • Package Case Outline: 340AH
  • MSL: NA
  • Container Type: TUBE
  • Container Qty: 360
  • Specifications
  • V(BR)CES Typ (V): 1500 
  • IC Max (A): 10 
  • VCE(sat) Typ (V): 4.7 
  • VF Typ (V):
  • Eoff Typ (mJ): 0.1 
  • Eon Typ (mJ): 0.19 
  • Trr Typ (ns):
  • Irr Typ (A):
  • Gate Charge Typ (nC): 30 
  • Short Circuit Withstand (µs):
  • EAS Typ (mJ):
  • PD Max (W): 62.5 
  • Co-Packaged Diode: No 
  • Package Type: TO-3PF-3L 
  • ON Semiconductor Full Web Site